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STV60NE06-16

Part Number	STV60NE06-16
Manufacturer	ST Microelectronics
Description	N-CHANNEL POWER MOSFET
Published	Sep 24, 2005
Detailed Description	® STV60NE06-16 N - CHANNEL 60V - 0.013Ω - 60A PowerSO-10 STripFET™ POWER MOSFET PRELIMINARY DATA T YPE STV60NE06-16 s ...
Datasheet	STV60NE06-16 PDF File

Overview

® STV60NE06-16 N - CHANNEL 60V - 0.
013Ω - 60A PowerSO-10 STripFET™ POWER MOSFET PRELIMINARY DATA T YPE STV60NE06-16 s s s s s V DSS 60 V R DS(on) < 0.
016 Ω ID 60 A TYPICAL RDS(on) = 0.
013 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 10 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) 1 PowerSO-10 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt Ts tg Tj May 2000 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature o o o Value 60 60 ± 20 60 42 240 150 1 6 -65 to 175 175 ( 1) ISD ≤60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns o o C C 1/6 (•) Pulse width limited by safe operating area STV60NE06-16 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose 1 62.
5 0.
5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 2...

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STV60NE06-16 N-CHANNEL POWER MOSFET - ST Microelectronics

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