DatasheetsPDF.com

XP01401

Panasonic Semiconductor
Part Number XP01401
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Sep 25, 2005
Detailed Description Composite Transistors XP01401 (XP1401) Silicon PNP epitaxial planar type (0.425) Unit: mm 0.12+0.05 –0.02 For general...
Datasheet PDF File XP01401 PDF File

XP01401
XP01401

Overview
Composite Transistors XP01401 (XP1401) Silicon PNP epitaxial planar type (0.
425) Unit: mm 0.
12+0.
05 –0.
02 For general amplification ■ Features • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half 0.
20±0.
05 5 4 1.
25±0.
10 2.
1±0.
1 1 2 3 (0.
65) (0.
65) 1.
3±0.
1 2.
0±0.
1 10˚ ■ Basic Part Number • 2SB0709A (2SB709A) × 2 0.
9±0.
1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating −60 −50 −7 −100 −200 150 150 −55 to +150 Unit V V V mA mA mW °C °C Tr1 1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A 0 to 0.
1 0.
9+0.
2 –0.
1 4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package Marking Symbol: 5V Internal Connection 5 4 5˚ Tr2 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE hFE(Small/ Large) Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 IE = −10 µA, IC = 0 VCB = −20 V, IE = 0 VCE = −10 V, IB = 0 VCE = −10 V, IC = −2 mA VCE = −10 V, IC = −2 mA IC = −100 mA, IB = −10 mA VCB = −10 V, IE = 1 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz Min −60 −50 −7 Typ Max − 0.
1 −100 160 0.
50 0.
99 − 0.
3 80 2.
7 − 0.
5 460 VCE(sat) fT Cob MHz pF Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Ratio between 2 elements Note) The part number ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)