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1PS89SB16

NXP
Part Number 1PS89SB16
Manufacturer NXP
Description Schottky barrier double diodes
Published Sep 26, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes Preliminary ...
Datasheet PDF File 1PS89SB16 PDF File

1PS89SB16
1PS89SB16

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes Preliminary specification 1998 Nov 10 Philips Semiconductors Preliminary specification Schottky barrier double diodes FEATURES • Power dissipation comparable to SOT23 • Low forward voltage • Guard ring protected • Ultra small SMD package.
APPLICATIONS • Ultra high speed switching • Voltage clamping • Protection circuits • Blocking diodes.
DESCRIPTION 1 2 MBK837 1PS89SB14; 1PS89SB15; 1PS89SB16 PINNING 1PS89SB.
.
PIN 14 1 2 3 a1 k2 k1, a2 15 a1 a2 k1, k2 16 k1 k2 a1, a2 Fig.
2 1 2 MLC358 3 1PS89SB14 diode configuration (symbol).
3 fpage 3 1 2 MLC359 Fig.
3 Planar Schottky barrier double diodes encapsulated in an ultra small plastic SMD SC-89 (SOT490) package.
MARKING TYPE NUMBER 1PS89SB14 1PS89SB15 1PS89SB15 MARKING CODE 44 43 45 Fig.
1 Top view 1PS89SB15 diode configuration (symbol).
Simplified outline (SC-89; SOT490) and pin configuration.
Fig.
4 3 1 2 MLC360 1PS89SB16 diode configuration (symbol).
1998 Nov 10 2 Philips Semiconductors Preliminary specification Schottky barrier double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER 1PS89SB14; 1PS89SB15; 1PS89SB16 CONDITIONS MIN.
MAX.
UNIT Per diode unless otherwise specified VR IF IFRM IFSM Ptot Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation (per package) storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.
5 tp < 10 ms Tamb ≤ 25 °C − − − − − −65 − −65 30 200 300 600 200 +150 125 +125 V mA mA mA mW °C °C °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX.
UNIT Per diode unless otherwise specified VF forward voltage see Fig.
5 IF = 0.
1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR Cd Note 1.
Pulse test: tp ≤ 300 µs; δ ≤ 0.
02.
THERMAL CHARACT...


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