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FJP3835

Fairchild Semiconductor
Part Number FJP3835
Manufacturer Fairchild Semiconductor
Description Power Amplifier
Published Sep 26, 2005
Detailed Description FJP3835 FJP3835 Power Amplifier • High Current Capability : IC=8A • High Power Dissipation • Wide S.O.A 1 TO-220 2.Co...
Datasheet PDF File FJP3835 PDF File

FJP3835
FJP3835

Overview
FJP3835 FJP3835 Power Amplifier • High Current Capability : IC=8A • High Power Dissipation • Wide S.
O.
A 1 TO-220 2.
Collector 3.
Emitter 1.
Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 200 120 8 8 16 50 150 - 55 ~ 150 Units V V V A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tF tSTG * Pulse Test : PW=20µ...


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