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IRHE7130

Part Number	IRHE7130
Manufacturer	International Rectifier
Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Published	Sep 26, 2005
Detailed Description	PD - 90713E RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE7230...
Datasheet	IRHE7130 PDF File

Overview

PD - 90713E RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE7230 100K Rads (Si) IRHE3230 300K Rads (Si) IRHE4230 IRHE8230 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.
35 Ω 0.
35 Ω 0.
35 Ω 0.
35 Ω ID 5.
5A 5.
5A 5.
5A 5.
5A IRHE7230 JANSR2N7262U 200V, N-CHANNEL REF: MIL-PRF-19500/601 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY QPL Part Number JANSR2N7262U JANSF2N7262U JANSG2N7262U JANSH2N7262U LCC - 18 International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max.
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg.
Mounting Surface Temp.
Weight For footnotes refer to the last page 5.
5 3.
5 22 25 0.
2 ±20 240 — — 5.
0 -55 to 150 300 ( for 5s) 0.
42 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.
irf.
com 1 02/01/01 IRHE7230, JANSR2N7262U Pre-Irradiation E...

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IRHE7130 RADIATION HARDENED POWER MOSFET SURFACE MOUNT - International Rectifier

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