DatasheetsPDF.com

IXFN60N60

IXYS Corporation
Part Number IXFN60N60
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFET
Published Sep 26, 2005
Detailed Description HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary d...
Datasheet PDF File IXFN60N60 PDF File

IXFN60N60
IXFN60N60


Overview
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s IS Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC= 25°C, Chip capability TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFN 60N60 VDSS ID25 RDS(on) D G S = 600 V = 60 A = 75 mW S Maximum Ratings 600 600 ±20 ±30 60 240 60 64 4 5 700 -55 .
.
.
+150 150 -55 .
.
.
+150 2500 3000 V V V V A A A mJ J V/ns W °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.
5/13 Nm/lb.
in.
1.
5/13 Nm/lb.
in.
30 g • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
600 2 4.
5 ±200 TJ = 25°C TJ = 125°C 100 2 75 V V nA mA mA mW • • • • Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.
5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % Advantages • Easy to mount • • Space savings High power density IXYS reserves the right to change limits, test conditions, and dimensions.
98593B (7/00) © 2000 IXYS All rights reserved 1-2 IXFN 60N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified)...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)