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IXFT13N80Q

Part Number	IXFT13N80Q
Manufacturer	IXYS Corporation
Description	HiPerFET Power MOSFETs
Published	Sep 26, 2005
Detailed Description	HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q ...
Datasheet	IXFT13N80Q PDF File

Overview

HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800 V 13 A 0.
70 W trr £ 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 13 52 13 28 750 5 250 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ mJ V/ns W °C °C °C °C TO-268 (D3) (IXFT) Case Style G S (TAB) TO-247 AD (IXFH) (TAB) G = Gate S = Source D = Drain TAB = Drain 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque TO-247 TO-268 300 1.
13/10 Nm/lb.
in.
6 4 g g Features • • • • IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated • Fast s...

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IXFT13N80Q HiPerFET Power MOSFETs - IXYS Corporation

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