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PH1214-6M

MA-com
Part Number PH1214-6M
Manufacturer MA-com
Description RADAR PULSED POWER TRANSISTOR
Published Sep 27, 2005
Detailed Description an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon M...
Datasheet PDF File PH1214-6M PDF File

PH1214-6M
PH1214-6M

Overview
an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.
2 - 1.
4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘NletalKeramic Package Absolute Maximum Ratings at 25°C UNLESS C-iTRW:SE ‘ICTED.
T3LE?ANCES A?E (xI, -- IN’HES =.
O”‘j’ I IMETERS ; 13yy’ I Electrical Characteristics Parameter at 25°C Symbol Min Max Units Test Conditions Collector-Emitter Breakdown Voltage Collector-Emitterleakage Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stablility Current BV,,, ICES RW(X) PO”T GP ‘lC 65 1.
5 5.
8 V mA “C/w w dB % lc=l 2 mA v,,=40 v V,,=28 V, P&.
2 V,,=28 V, P,,=1.
2 W, F=1.
20,1.
30,1.
40 GHz 6.
0 7.
0 45 - W, F=1.
20, 1.
30, 1.
40GHz GHz GHz GHz GHz GHz V,,=28 V, P,,=1.
2 W, F=l.
20,1.
30,1.
40 Vcc=28 V, P,,=l.
2 W, F=l.
20,1.
30,1.
40 RL VSWR-T VSWR-S 6 - 3:l 1S:l dB - V,,=28 V, P&.
2 W, F=l.
20,1.
30,1.
40 V,,=28 V, P,,=l.
2 W, F=l.
20,1.
30,1.
40 V,,=28 V, P,,=1.
2 W, F=l.
20,1.
30,1.
40 Broadband F(GHz) Test Fixture Impedances z,,m z&-4 1.
20 1.
30 TBD TBD TBD TBD ...


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