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K4E660812E

Samsung semiconductor
Part Number K4E660812E
Manufacturer Samsung semiconductor
Description (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
Published Sep 27, 2005
Detailed Description K4E660812E,K4E640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,38...
Datasheet PDF File K4E660812E PDF File

K4E660812E
K4E660812E

Overview
K4E660812E,K4E640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs.
Extended Data Out Mode offers high speed random access of memory cells within the same row.
Refresh cycle(4K Ref.
or 8K Ref.
), access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version.
This 8Mx8 EDO Mode DRAM family is fabricate d using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES • Part Identification - K4E660812E-JC/L(3.
3V, 8K Ref.
) - K4E640812E-JC/L(3.
3V, 4K Ref.
) - K4E660812E-TC/L(3.
3V, 8K Ref.
) - K4E640812E-TC/L(3.
3V, 4K Ref.
) • Extended Data Out Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • Fast parallel test mode capability • LVTTL(3.
3V) compatible inputs and outputs • Active Power Dissipation Unit : mW Speed -45 -50 -60 • Refresh Cycles Part NO.
K4E660812E* K4E640812E Refresh cycle 8K 4K Refresh time Normal 64ms L-ver 128ms RAS CAS W Control Clocks VBB Generator Vcc Vss • Early Write or output enable controlled write • JEDEC Standard pinout • Available in Plastic SOJ and TSOP(II) packages • +3.
3V ±0.
3V power supply 4K 432 396 360 8K 324 288 252 FUNCTIONAL BLOCK DIAGRAM Refresh Control Refresh Counter Memory Array 8,388,608 x 8 Cells Sens e Amps & I/O * Access mode & RAS only refresh mode : 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.
) CAS -before-RAS & Hidden refresh mode : 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.
) ¡Ü Refresh Timer Row Decoder Data in Buffer DQ0 to DQ7 Data out Buffer Performance Range: Speed -45 -50 -60 t RAC 45ns 50ns 60ns t CAC 12ns 13ns 15ns t RC 74ns 84ns 104ns t HPC 17ns 20ns 25ns A0~A12 (A...


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