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IRFR3411PBF

Part Number	IRFR3411PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Sep 27, 2005
Detailed Description	PD - 95371A l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Tem...
Datasheet	IRFR3411PBF PDF File

Overview

PD - 95371A l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G IRFR3411PbF IRFU3411PbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 44mΩ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications.
Power dissipation levels up to 1.
5 watts are possible in typical surface mount applications.
S ID = 32A D-Pak IRFR3411 I-Pak IRFU3411 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
32 23 110 130 0.
83 ± 20 16 13 7.
0 -55 to + 175 300 (1.
6mm from case ) Units A W W/°C V A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ.
––– ––– ––– Max.
1.
2 50 110 Units °C/W www.
irf.
com 1 12/03/04 IRFR/U3411PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Stat...

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IRFR3411PBF HEXFET Power MOSFET - International Rectifier

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