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IRFR310B

Fairchild Semiconductor
Part Number IRFR310B
Manufacturer Fairchild Semiconductor
Description 400V N-Channel MOSFET
Published Sep 27, 2005
Detailed Description IRFR310B / IRFU310B November 2001 IRFR310B / IRFU310B 400V N-Channel MOSFET General Description These N-Channel enhanc...
Datasheet PDF File IRFR310B PDF File

IRFR310B
IRFR310B

Overview
IRFR310B / IRFU310B November 2001 IRFR310B / IRFU310B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features • • • • • • 1.
7A, 400V, RDS(on) = 3.
4Ω @VGS = 10 V Low gate charge ( typical 7.
7 nC) Low Crss ( typical 6.
0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G! G S D-PAK IRFR Series I-PAK G D S IRFU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Cont...


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