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STGP20NB37LZ

Part Number	STGP20NB37LZ
Manufacturer	ST Microelectronics
Description	N-CHANNEL IGBT
Published	Sep 28, 2005
Detailed Description	® STGP20NB37LZ N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH™ IGBT PRELIMINARY DATA TYPE STGP20NB37LZ s s ...
Datasheet	STGP20NB37LZ PDF File

Overview

® STGP20NB37LZ N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH™ IGBT PRELIMINARY DATA TYPE STGP20NB37LZ s s s s s V CES CLAMPED V CE(s at) < 2.
0 V IC 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 2 DESCRIPTION Using the latest high voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs with outstanding performances.
The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
APPLICATIONS s AUTOMOTIVE IGNITION TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( • ) E AS P tot E SD T s tg Tj April 2000 Parameter Collector-Emitter Voltage (V GS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25 o C Collector Current (continuous) at Tc = 100 o C Collector Current (pulsed) Single Pulse Energy Tc = 25 o C T otal Dissipation at Tc = 25 o C Derating Factor ESD (Human Body Model) Storage Temperature Max.
O perating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4 -65 to 175 175 Un it V V V A A A mJ W W /o C KV o o C C 1/6 (•) Pulse width limited by safe operating area STGP20NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1 62.
5 0.
2 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l BV (CES) Parameter Clamped Voltage I C =2mA I C =2mA I C =2mA I C = 75 mA I G = ± 2 mA V CE = 15 V V CE = 200 V V GE = ± 10 V V GE = 0 T C = 150 o C V GE = 0 T C = 150 oC V CE = 0 ± 300 10 ± 660 15 Test Con ditions V GE = 0 V GE = 0 V GE = 0 T C = - 40 C T C = 25 o C o T C = 150 C TC = 25 o C o Min.
380 375 370 20 12 Typ.
405 400 395 28 14 Max.
430 425 420 Unit V V V V BV (ECR) BV GE I CES...

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STGP20NB37LZ N-CHANNEL IGBT - ST Microelectronics

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