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STGF10NB60SD

ST Microelectronics
Part Number STGF10NB60SD
Manufacturer ST Microelectronics
Description IGBT
Published Sep 28, 2005
Detailed Description STGF10NB60SD N-CHANNEL 10A - 600V TO-220FP PowerMESH™ IGBT TYPE STGF10NB60SD s VCES 600 VCE(sat) (Max) @25°C < 1.8 V ...
Datasheet PDF File STGF10NB60SD PDF File

STGF10NB60SD
STGF10NB60SD

Overview
STGF10NB60SD N-CHANNEL 10A - 600V TO-220FP PowerMESH™ IGBT TYPE STGF10NB60SD s VCES 600 VCE(sat) (Max) @25°C < 1.
8 V IC @100°C 10 A s s s s HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 2 TO-220FP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).
APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM (q ) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Coll...


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