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STGB10NB40LZ

ST Microelectronics
Part Number STGB10NB40LZ
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description STGB10NB40LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB10NB40LZ s s s s s s VCES CLAMPE...
Datasheet PDF File STGB10NB40LZ PDF File

STGB10NB40LZ
STGB10NB40LZ

Overview
STGB10NB40LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB10NB40LZ s s s s s s VCES CLAMPED VCE(sat) < 1.
8 V IC 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 D2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s AUTOMOTIVE IGNITION ORDERING INFORMATION SALES TYPE STGB10NB40LZT4 MARKING GB10NB40LZ PACKAGE D2PAK PACKAGING TAPE & REEL August 2003 1/10 STGB10NB40LZ ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) Eas PTOT ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emit...


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