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XN04504

Panasonic Semiconductor
Part Number XN04504
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Sep 28, 2005
Detailed Description Composite Transistors XN04504 (XN4504) Silicon NPN epitaxial planar type For amplification of low-frequency output 4 2....
Datasheet PDF File XN04504 PDF File

XN04504
XN04504

Overview
Composite Transistors XN04504 (XN4504) Silicon NPN epitaxial planar type For amplification of low-frequency output 4 2.
90+0.
20 –0.
05 1.
9±0.
1 (0.
95) (0.
95) 5 6 Unit: mm 0.
16+0.
10 –0.
06 1.
50+0.
25 –0.
05 0.
30+0.
10 –0.
05 0.
50+0.
10 –0.
05 10˚ ■ Basic Part Number • 2SD1328 × 2 1.
1+0.
2 –0.
1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PT Tj Tstg 25 20 12 0.
5 1 300 150 −55 to +150 V V V A A mW °C °C 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 0 to 0.
1 Parameter Symbol Rating Unit Marking Symbol: 5X Internal Connection 4 5 6 Tr2 1.
1+0.
3 –0.
1 ■ Absolute Maximum Ratings Ta = 25°C (0.
65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 3 2 1 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Tr1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistance *2 *1 3 Conditions Min 25 20 12 2 Typ 1 Max Unit V V V 100 nA  V V MHz pF Ω Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.
5 A VCE = 2 V, IC = 1 A IC = 0.
5 A, IB = 20 mA IC = 0.
5 A, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 60 0.
13 800 0.
40 1.
2 200 10 1.
0 Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*1: Pulse measurement 1 kΩ *2: Ro...


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