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SUM40N02-09P

Vishay Siliconix
Part Number SUM40N02-09P
Manufacturer Vishay Siliconix
Description N-Channel 20-V (D-S) 175C MOSFET
Published Sep 28, 2005
Detailed Description SPICE Device Model SUM40N02-09P Vishay Siliconix N-Channel 20-V (D-S), 175°C MOSFET CHARACTERISTICS • N-Channel Vertica...
Datasheet PDF File SUM40N02-09P PDF File

SUM40N02-09P
SUM40N02-09P

Overview
SPICE Device Model SUM40N02-09P Vishay Siliconix N-Channel 20-V (D-S), 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet.
Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 72198 08-Jun-04 www.
vishay.
com 1 SPICE Device Model SUM40N02-09P Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Conditions Simulated Data 1.
7 438 0.
0078 0.
010 0.
0136 0.
91 Measured Data Unit VGS(th) ID(on) VDS = VGS, ID = 250 µA VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A V A 0.
008 Ω 0.
0135 1.
1 V Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A, TJ = 125°C VGS = 4.
5 V, ID = 20 A Forward Voltagea VSD IF = 40 A, VGS = 0 V Dynamic b Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Ri...


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