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SSM3K09FU

Part Number	SSM3K09FU
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Sep 28, 2005
Detailed Description	SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit:...
Datasheet	SSM3K09FU PDF File

Overview

SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.
7 Ω (max) (@VGS = 10 V) : Ron = 1.
2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID Pulse IDP 400 mA 800 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of JEITA SC-70 high temperature/current/voltage and the signif...

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SSM3K09FU Silicon N-Channel MOSFET - Toshiba Semiconductor

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