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SKW30N60HS

Infineon Technologies
Part Number SKW30N60HS
Manufacturer Infineon Technologies
Description HIGH SPEED IGBT
Published Sep 28, 2005
Detailed Description SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand...
Datasheet PDF File SKW30N60HS PDF File

SKW30N60HS
SKW30N60HS

Overview
SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ C G E PG-TO-247-3 Type VCE IC Eoff Tj Marking Package SKW30N60HS 600V 30 480µJ 150°C K30N60HS PG-TO-247-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp...


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