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IRFU1N60A

International Rectifier
Part Number IRFU1N60A
Manufacturer International Rectifier
Description SMPS MOSFET
Published Sep 28, 2005
Detailed Description PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l Power Factor Co...
Datasheet PDF File IRFU1N60A PDF File

IRFU1N60A
IRFU1N60A

Overview
PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l Power Factor Correction Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current IRFR1N60A IRFU1N60A HEXFET® Power MOSFET VDSS 600V Rds(on) max 7.
0Ω ID 1.
4A D-Pak IRFR1N60A I-Pak IRFU1N60A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
1.
4 0.
89 5.
6 36 0.
28 ± 30 3.
8 -55 to + 150 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies: l Low Power Single Transistor Flyback Notes  through … are on page 9 www.
irf.
com 1 3/7/03 IRFR/U1N60A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
600 ––– 2.
0 ––– ––– ––– ––– Typ.
––– ––– ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA 7.
0 Ω VGS = 10V, ID = 0.
84A „ 4.
0 V VDS = VGS, ID = 250µA 25 VDS = 600V, VGS = 0V µA 250 VDS = 480V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Ef...


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