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IRFZ40

ST Microelectronics
Part Number IRFZ40
Manufacturer ST Microelectronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Published Sep 29, 2005
Detailed Description IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI s s s s s s s V DSS 50 V 50 V ...
Datasheet PDF File IRFZ40 PDF File

IRFZ40
IRFZ40

Overview
IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI s s s s s s s V DSS 50 V 50 V R DS( on) < 0.
028 Ω < 0.
028 Ω ID 50 A 27 A TYPICAL RDS(on) = 0.
022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220 3 1 2 1 2 3 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Parameter IRFZ40 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (cont.
) at Tc = 25 oC Drain Current (cont.
) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation Withstand Voltage (DC) St...


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