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IRFZ14S

International Rectifier
Part Number IRFZ14S
Manufacturer International Rectifier
Description Advanced Process Technology / Surface Mount
Published Dec 31, 2006
Detailed Description www.DataSheet4U.com PD - 9.890A IRFZ14S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (I...
Datasheet PDF File IRFZ14S PDF File

IRFZ14S
IRFZ14S

Overview
www.
DataSheet4U.
com PD - 9.
890A IRFZ14S/L HEXFET® Power MOSFET l l l l l Advanced Process Technology Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.
20Ω G ID = 10A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
The through-hole version (IRFZ14L) is available for lowprofile applications.
S D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V … Continuous Drain Current, VGS @ 10V … Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
10 7.
2 40 3.
7 43 0.
29 ± 20 47 4.
5 -55 to + 175 300 (1.
6mm from case ) Units A W W W/°C V mJ V/ns °C °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ.
––– ––– Max.
3.
5 40 Units °C/W 8/25/97 IRFZ14S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on...


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