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Y100N10E

Motorola
Part Number Y100N10E
Manufacturer Motorola
Description MTY100N10E
Published Sep 29, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™Designer's Data Sheet TMOS E-FET.™ Power Fi...
Datasheet PDF File Y100N10E PDF File

Y100N10E
Y100N10E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY100N10E/D ™Designer's Data Sheet TMOS E-FET.
™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source diode with fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads.
The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage...


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