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MP6301

Toshiba Semiconductor
Part Number MP6301
Manufacturer Toshiba Semiconductor
Description High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor
Published Sep 29, 2005
Detailed Description MP6301 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) MP6301 High ...
Datasheet PDF File MP6301 PDF File

MP6301
MP6301

Overview
MP6301 TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) MP6301 High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor · · · · Small package by full molding (SIP 12 pin) High collector power dissipation (6 devices operation) : PT = 4.
4 W (Ta = 25°C) High collector current: IC (DC) = ±3 A (max) High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (6 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 100 80 8 3 5 0.
5 2.
0 PNP −100 −80 −8 −3 −5 −0.
5 Unit V V V A A W JEDEC JEITA TOSHIBA ― ― 2-32C1F Weight: 3.
9 g (typ.
) PT Tj Tstg 4.
4 150 −55 to 150 W °C °C Array Configuration 12 R1 R2 4 7 10 3 6 9 2 R1 R2 1 5 8 R1 ≈ 4.
5 kΩ, R2 ≈ 300 Ω 11 1 2002-11-20 MP6301 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (6 devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.
2 mm from case for 10 s) TL 260 °C Symbol Max Unit ΣRth (j-a) 28.
4 °C/W Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time Storage time tstg IB1 20 µs Test Condition VCB = 100 V, IE = 0 A VCE = 80 V, IB = 0 A VEB = 8 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A VCE = 2 V, IC = 2 A IC = 2 A, IB = 4 mA IC = 2 mA, IB = 4 mA VCE = 2 V, IC = 0.
5 A VCB = 10 V, IE = 0 A, f = ...


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