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STP7NE10L

ST Microelectronics
Part Number STP7NE10L
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Oct 1, 2005
Detailed Description ® STP7NE10L N - CHANNEL 100V - 0.3 Ω - 7A - TO-220 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP7NE10L s s s s s V...
Datasheet PDF File STP7NE10L PDF File

STP7NE10L
STP7NE10L

Overview
® STP7NE10L N - CHANNEL 100V - 0.
3 Ω - 7A - TO-220 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP7NE10L s s s s s V DSS 100 V R DS(on) < 0.
4 Ω ID 7A TYPICAL RDS(on) = 0.
3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 1 3 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size™ " strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.
) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS ID ID I DM ( • ) P tot dv/dt(1 ) T st g Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
Operating Junction Temperature o o Value 100 100 ± 20 7 4.
9 28 45 0.
3 6 -65 to 150 175 (1) ISD ≤7 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 (•) Pulse width limited by safe operating area October 1999 STP7NE10L THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 3.
33 100 1.
5 275 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 30 V) Max Value 7 40 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise ...


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