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MPX5999D

Motorola
Part Number MPX5999D
Manufacturer Motorola
Description X-ducer SILICON PRESSURE SENSORS
Published Oct 3, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPX5999D/D 0 to 1000 kPa (0 to 150 PSI) On-Chip Signal C...
Datasheet PDF File MPX5999D PDF File

MPX5999D
MPX5999D


Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPX5999D/D 0 to 1000 kPa (0 to 150 PSI) On-Chip Signal Conditioned, 0.
2 V to 4.
7 V Output, Temperature Compensated and Calibrated, Silicon Pressure Sensor The MPX5999D piezoresistive transducer is a state–of–the–art pressure sensor designed for a wide range of applications, but particularly for those employing a microcontroller or microprocessor with A/D inputs.
This patented, single element X–ducer combines advanced micromachining techniques, thin–film metallization and bipolar semiconductor processing to provide an accurate, high level analog output signal that is proportional to applied pressure.
Figure 1 shows a block diagram of the internal circuitry integrated on the stand–alone sensing chip.
Features • Temperature Compensated Over 0 to 85°C • Ideally Suited for Microprocessor or Microcontroller–Based Systems • Patented Silicon Shear Stress Strain Gauge • Durable Epoxy Unibody Element MPX5999D X–ducer™ SILICON PRESSURE SENSORS BASIC CHIP CARRIER ELEMENT CASE 867–08, STYLE 1 PIN NUMBER VS 3 1 2 3 Vout Gnd VS 4 5 6 N/C N/C N/C X–ducer SENSING ELEMENT THIN FILM TEMPERATURE COMPENSATION AND GAIN STAGE #1 2 GND GAIN STAGE #2 AND GROUND REFERENCE SHIFT CIRCUITRY 1 Vout NOTE: Pins 4, 5, and 6 are internal device connections.
Do not connect to external circuitry or ground.
Pin 1 is noted by the notch in the Lead.
PINS 4, 5 AND 6 ARE NO CONNECTS Figure 1.
Fully Integrated Pressure Sensor Schematic MAXIMUM RATINGS(1) Parametrics Overpressure(2) (P1 > P2) Burst Pressure(2) (P1 > P2) Storage Temperature Operating Temperature Symbol Pmax Pburst Tstg TA Value 4000 6000 – 40° to +150 – 40° to +125 Unit kPa kPa °C °C 1.
TC = 25°C unless otherwise noted.
Maximum Ratings apply to Case 867–08 only.
2.
Extended exposure at the specified limits may cause permanent damage or degradation to the device.
3.
This sensor is designed for applications where P1 is always greater than, or equal to P2.
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