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M36L0R8060

ST Microelectronics
Part Number M36L0R8060
Manufacturer ST Microelectronics
Description 256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM
Published Oct 4, 2005
Detailed Description M36L0R8060T0 M36L0R8060B0 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, ...
Datasheet PDF File M36L0R8060 PDF File

M36L0R8060
M36L0R8060

Overview
M36L0R8060T0 M36L0R8060B0 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.
8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 64 Mbit (4Mb x16) Pseudo SRAM ■ SUPPLY VOLTAGE – VDDF = VCCP = VDDQ = 1.
7 to 1.
95V – VPP = 9V for fast program ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M36L0R8060T0: 880Dh – Bottom Device Code M36L0R8060B0: 880Eh ■ PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY ■ SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns ■ SYNCHRONOUS BURST READ SUSPEND ■ PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command ■ MEMORY ORGANIZATION – Multiple Bank Memory Array: 16 Mbit Banks – Parameter Blocks (Top or Bottom location) ■ DUAL OPERATIONS – prog...


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