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IRFAG50

International Rectifier
Part Number IRFAG50
Manufacturer International Rectifier
Description N-Channel MOSFET
Published Oct 6, 2005
Detailed Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRFAG...
Datasheet PDF File IRFAG50 PDF File

IRFAG50
IRFAG50

Overview
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BVDSS IRFAG50 1000V RDS(on) 2.
0 ID 5.
6A PD- 90582A IRFAG50 1000V, N-CHANNEL Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-3 (TO-204AA) Features  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery  TJ Operating Junction and TSTG Storage Temperature Range Lead Temperature Weight Value 5.
6 3.
5 22.
4 150 1.
2 ± 20 860 5.
6 15 1.
0 -55 to + 150 300 (0.
063 in.
(1.
6mm) from case for 10s) 11.
5 (Typical) Units A W W/°C V mJ A mJ V/ns °C g For footnotes refer to the page 2.
1 International Rectifier HiRel Products, Inc.
2019-07-01 IRFAG50 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol BVDSS BVDSS/TJ RDS(on) VGS(th) Gfs IDSS IGSS QG QGS QGD td(on) tr td(off) tf Ls +LD Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Stati...


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