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GFB70N03

Part Number	GFB70N03
Manufacturer	Vishay Intertechnology
Description	N-Channel Enhancement-Mode MOSFET
Published	Oct 6, 2005
Detailed Description	GFB70N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 8mΩ ID 70A D TO-263AB 0.380 (9.65) 0.420 (10.67) 0.21 (5.33)...
Datasheet	GFB70N03 PDF File

Overview

GFB70N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 8mΩ ID 70A D TO-263AB 0.
380 (9.
65) 0.
420 (10.
67) 0.
21 (5.
33) Min.
D G 0.
160 (4.
06) 0.
190 (4.
83) 0.
045 (1.
14) 0.
055 (1.
40) S 0.
42 (10.
66) 0.
320 (8.
13) 0.
360 (9.
14) G PIN D S 0.
575 (14.
60) 0.
625 (15.
88) 0.
055 (1.
39) 0.
066 (1.
68) Dimensions in inches and (millimeters) 0.
63 (17.
02) 0.
33 (8.
38) Seating Plate -T0.
096 (2.
43) 0.
102 (2.
59) 0.
027 (0.
686) 0.
037 (0.
940) 0.
120 (3.
05) 0.
155 (3.
94) 0.
014 (0.
35) 0.
020 (0.
51) 0.
100 (2.
54) 0.
130 (3.
30) 0.
08 (2.
032) 0.
24 (6.
096) 0.
12 (3.
05) Mounting Pad Layout Mechanical Data Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 1.
3g Mounting Position: Any Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Symbol VDS VGS ID IDM PD TJ, Tstg TL RθJC (2) C = 25°C unless otherwise noted) Limit 30 ± 20 Unit V 70 200 62.
5 25 –55 to 150 275 2.
0 40 A W °C °C °C/W °C/W Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.
) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance RθJA Notes: (1) Maximum DC current limited by the package (2) 1-in2 2oz.
Cu PCB mounted 5/16/01 GFB70N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (1) J = 25°C unless otherwise noted) Symbol Test Condition VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 30V, VGS = 0V VDS ≥ 5V, VGS = 10V VGS =...

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GFB70N03 N-Channel Enhancement-Mode MOSFET - Vishay Intertechnology

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