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2SK660

Part Number	2SK660
Manufacturer	NEC
Description	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
Published	Oct 8, 2005
Detailed Description	DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CO...
Datasheet	2SK660 PDF File

Overview

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM.
FEATURES • Compact package • High forward transfer admittance | yfs | = 1200 µS TYP.
(VDS = 5 V, ID = 0 µA) • Low capacitance Ciss = 4.
5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) • Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK660 PACKAGE SST ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature Note VGS = –1.
0 V Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
Note VDSX VGDO ID IG PT Tj Tstg 20 –20 10 10 100 125 –55 to +125 V V mA mA mW °C °C EQUIVALENT CIRCUIT Drain Gate Source The information in this document is subject to change without notice.
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