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UPA507TE

Part Number	UPA507TE
Manufacturer	NEC
Description	P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
Published	Oct 9, 2005
Detailed Description	DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING ...
Datasheet	UPA507TE PDF File

Overview

DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The µ PA507TE is a switching device, which can be driven directly by a 1.
8 V power source.
This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on.
PACKAGE DRAWING (Unit: mm) 0.
32 +0.
1 –0.
05 0.
16+0.
1 –0.
06 0.
65 –0.
15 +0.
1 2.
8 ±0.
2 5 4 1.
5 0 to 0.
1 1 2 3 FEATURES • 1.
8 V drive available (MOS FET) • Low on-state resistance (MOS FET) RDS(on)1 = 68 mΩ TYP.
(VGS ...

Similar Datasheet

UPA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING - NEC

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