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STPS15H100CB

ST Microelectronics
Part Number STPS15H100CB
Manufacturer ST Microelectronics
Description High voltage power Schottky rectifier
Published Oct 11, 2005
Detailed Description STPS15H100C High voltage power Schottky rectifier A1 K A2 K K A1 A2 A1 A2 DPAK Features  Negligible switching lo...
Datasheet PDF File STPS15H100CB PDF File

STPS15H100CB
STPS15H100CB

Overview
STPS15H100C High voltage power Schottky rectifier A1 K A2 K K A1 A2 A1 A2 DPAK Features  Negligible switching losses  Low leakage current  Good trade off between leakage current and forward voltage drop  Low thermal resistance  Avalanche capability specified  ECOPACK®2 compliant component for DPAK on demand Datasheet - production data Description Dual center tab Schottky rectifier suited for switched mode power supply and high frequency DC to DC converters.
Packaged in DPAK, this device is intended for use in high frequency inverters.
Table 1.
Device summary Symbol Value IF(AV) VRRM Tj VF (typ) 2 x 7.
5 A 100 V 175 °C 0.
62 V December 2015 This is information on a product in full production.
DocID8562 Rev 7 1/8 www.
st.
com Characteristics 1 Characteristics STPS15H100C Table 2.
Absolute ratings (limiting values per diode at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) Repetitive peak reverse voltage Forward rms current Average forward current, δ = 0.
5, square wave Tc = 135 °C(1) Per diode Per device IFSM PARM Surge non repetitive forward current Repetitive peak avalanche power tp = 10 ms sinusoidal tp = 10 µs, Tj = 125 °C Tstg Storage temperature range Tj Maximum operating junction temperature(2) 1.
Value based on Rth(j-c) max (per diode) 2.
d----P-----t--o----t dTj  R-----t--h-----1--j---–----a---- condition to avoid thermal runaway for a diode on its own heatsink 100 V 10 A 7.
5 A 15 75 A 475 W -65 to +175 °C 175 °C Table 3.
Thermal resistance Symbol Parameter Value Unit Rth(j-c) Rth(c) Junction to case Coupling Per diode Total 4 2.
4 °C/W 0.
7 When the diodes 1 and 2 are used simultaneously:  Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Symbol Table 4.
Static electrical characteristics (per diode) Parameter Test Conditions Min.
Typ.
Max.
Unit IR(1) Reverse leakage current VF(2) Forward voltage drop 1.
tp = 5 ms,  < 2% 2.
tp = 38...


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