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STPS30L30CG

ST Microelectronics
Part Number STPS30L30CG
Manufacturer ST Microelectronics
Description Low drop power Schottky rectifier
Published Oct 11, 2005
Detailed Description STPS30L30C Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Ex...
Datasheet PDF File STPS30L30CG PDF File

STPS30L30CG
STPS30L30CG

Overview
STPS30L30C Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Low thermal resistance ■ Avalanche capability specified Description This dual center tap Schottky rectifier is suited for switch mode power supplies and high frequency DC to DC converters.
Packaged in TO-220AB, D2PAK and I2PAK, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
Table 1.
Device summary IF(AV) VRRM Tj (max) VF(typ) 2 x 15 A 30 V 150 °C 0.
37 V A1 A2 K A2 A1 K TO-220AB STPS30L30CT K K A2 A1 D2PAK STPS30L30CG A2 A1 K I2PAK STPS30L30CR Figure 1.
Electrical characteristics (a) V I "Forward" I 2 x IO X VRRM VAR VR IF IO IR X V "Reverse" VTo VF(Io) VF VF(2xIo) IAR April 2010 a.
VARM and IARM must respect the reverse safe operating area defined in Figure 12 VAR and IAR are pulse measurements (tp < 1 µs).
VR, IR, VRRM and VF, are static characteristics Doc ID 5506 Rev 6 1/9 www.
st.
com 9 Characteristics 1 Characteristics STPS30L30C Table 2.
Symbol Absolute ratings (limiting values per diode) Parameter Value Unit VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current δ = 0.
5 Tc = 140 °C, Per diode Per device IFSM IRRM IRSM PARM(1) VARM (2) VASM (2) Tstg Tj dV/dt Surge non repetitive forward current tp = 10 ms sinusoidal, Peak repetitive reverse current tp = 2 µs square, F= 1 kHz square Non repetitive peak reverse current tp = 100 µs square Repetitive peak avalanche power tp = 1 µs Tj = 25 °C Maximum repetitive peak avalanche tp < 1 µs Tj < 150 °C voltage IAR < 35 A Maximum single pulse peak avalanche voltage tp < 1 µs Tj < 150 °C IAR < 35 A Storage temperature range Maximum operating junction temperature (3) Critical rate of rise of reverse voltage 30 V 30 A 15 A 30 220 A 1 A 3 A 5300 W 45 V 45 V -65 to + 175 1...


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