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SST39LF512

Silicon Storage Technology
Part Number SST39LF512
Manufacturer Silicon Storage Technology
Description 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
Published Oct 12, 2005
Detailed Description 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF51...
Datasheet PDF File SST39LF512 PDF File

SST39LF512
SST39LF512


Overview
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.
0 & 2.
7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations – 3.
0-3.
6V for SST39LF512/010/020/040 – 2.
7-3.
6V for SST39VF512/010/020/040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 10 mA (typical) – Standby Current: 1 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Fast Read Access Time: – 45 ns for SST39LF512/010/020/040 – 55 ns for SST39LF020/040 – 70 and 90 ns for SST39VF512/010/020/040 • Latched Address and Data • Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 1 second (typical) for SST39LF/VF512 2 seconds (typical) for SST39LF/VF010 4 seconds (typical) for SST39LF/VF020 8 seconds (typical) for SST39LF/VF040 • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm) – 48-ball TFBGA (6mm x 8mm) for 1 Mbit PRODUCT DESCRIPTION The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
The SST39LF512/ 010/020/040 devices write (Program or Erase) with a 3.
03.
6V power supply.
The SST39VF512/010/020/040 devices write with a 2.
7-3.
6V power supply.
The devices conform...


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