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CD909

CDIL
Part Number CD909
Manufacturer CDIL
Description NPN PLASTIC POWER TRANSISTOR
Published Oct 15, 2005
Detailed Description Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CD909 CD909 NP...
Datasheet PDF File CD909 PDF File

CD909
CD909

Overview
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CD909 CD909 NPN PLASTIC POWER TRANSISTOR Power Linear and Switching Applications PIN CONFIGURATION 1.
BASE 2.
COLLECTOR 3.
EMITTER 4.
COLLECTOR 4 1 2 3 B H F C E DIM A B C D E F G H J K L M N O M IN.
14.
42 9.
63 3.
56 M A X.
N L O 1 2 3 D G J M 16.
51 10.
67 4.
83 0.
90 1.
15 1.
40 3.
75 3.
88 2.
29 2.
79 2.
54 3.
43 0.
56 12.
70 14.
73 2.
80 4.
07 2.
03 2.
92 31.
24 DE G 7 A O ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 4 A; IB = 0.
5 A D.
C.
current gain IC = 1 A; VCE = 4 V All dim insions in m m .
K VCBO VCEO IC Ptot Tj VCEsat hFE max.
max.
max.
max.
max.
max.
min max.
100 90 12.
0 75 150 V V A W °C 1.
0 V 80 400 RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current VCBO VCEO VEBO IC max.
max.
max.
max.
100 90 6.
0 12.
0 V V V A Continental Device India Limited Data Sheet Page 1 of 3 CD909 Total power dissipation up to TC = 25°C Junction temperature Storage temperature CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 100 V Emitter cut-off current IC = 0; VEB = 5V Breakdown voltages IC = 1 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 4 A; IB = 0.
5 A Base emitter on voltage IC = 4A; VCE = 4V D.
C.
current gain IC = 1 A; VCE = 4 V IC = 10 A; VCE = 4 V Transition frequency IC = 0.
3 A; VCE = 3 V Output capacitance IE = 0; VCB = 10V Second breakdown collector current with base forward biased (non-repetitive) VCE = 21.
5 V; t = 50ms Ptot Tj Tstg max.
75 W max.
150 ºC –65 to +150 ºC ICBO IEBO VCEO VCBO VEBO VCEsat VBEsat VBE(on) hFE hFE fT Co max.
100 µA max.
1000 µA mi...


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