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MTP27N10E

Part Number	MTP27N10E
Manufacturer	Motorola
Description	TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
Published	Oct 18, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP27N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect...
Datasheet	MTP27N10E PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP27N10E/D ™ Data Sheet TMOS E-FET.
™ Power Field Effect Transistor Designer's MTP27N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Device Marking: MTP27N10E D TMOS POWER...

Similar Datasheet

MTP27N10E TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM - Motorola

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