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IRLMS6802

International Rectifier
Part Number IRLMS6802
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Oct 19, 2005
Detailed Description PD- 91848E IRLMS6802 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in ...
Datasheet PDF File IRLMS6802 PDF File

IRLMS6802
IRLMS6802

Overview
PD- 91848E IRLMS6802 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 A D VDSS = -20V D 2 5 D G 3 4 S RDS(on) = 0.
050Ω Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23.
This package is ideal for applications where printed circuit board space is at a premium.
The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Micro6ä Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Dr...


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