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MBR1100

ON Semiconductor
Part Number MBR1100
Manufacturer ON Semiconductor
Description Axial Lead Rectifier
Published Oct 20, 2005
Detailed Description MBR1100 Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon po...
Datasheet PDF File MBR1100 PDF File

MBR1100
MBR1100

Overview
MBR1100 Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features • Low Reverse Current • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • High Surge Capacity • These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.
4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max.
for 10 Seconds • Polarity: Cathode Indicated by Polarity Band MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (VR(equiv) ≤ 0.
2 VR (dc), RqJA = 50°C/W, P.
C.
Board Mounting, [see Note 3], TA = 120°C) Peak Repetitive Forward Current (VR(equiv) ≤ 0.
2 VR (dc), RqJA = 50°C/W, P.
C.
Board Mounting, [see Note 3], TA = 110°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Symbol VRRM VRWM VR IO IFRM IFSM Value 100 1.
0 2.
0 50 Unit V A A A Operating and Storage Junction Temperature Range (Note 1) TJ, Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10 V/ns Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
www.
onsemi.
com SCHOTTKY ...


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