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KRA562E

Korea Electronics
Part Number KRA562E
Manufacturer Korea Electronics
Description (KRA560E - KRA564E) EPITAXIAL PLANAR PNP TRANSISTOR
Published Oct 20, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. KRA560E~KRA564E E...
Datasheet PDF File KRA562E PDF File

KRA562E
KRA562E

Overview
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
KRA560E~KRA564E EPITAXIAL PLANAR PNP TRANSISTOR B FEATURES With Built-in Bias Resistors.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
A1 A C B1 Simplify Circuit Design.
1 5 DIM A A1 B 2 3 EQUIVALENT CIRCUIT C B R1 EQUIVALENT CIRCUIT (TOP VIEW) 5 4 P P 4 B1 C D H J P MILLIMETERS _ 0.
05 1.
6 + _ 0.
05 1.
0 + _ 0.
05 1.
6 + _ 0.
05 1.
2+ 0.
50 _ 0.
05 0.
2 + _ 0.
05 0.
5 + C D _ 0.
05 0.
12 + 5 Q1 Q2 H E 1 2 3 1.
Q 1 IN (BASE) 2.
Q 1, Q 2 COMMON (EMITTER) 3.
Q 2 IN (BASE) 4.
Q 2 OUT (COLLECTOR) 5.
Q 1 OUT (COLLECTOR) TESV MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage TemperatureRange * Total Rating.
SYMBOL PC * Tj Tstg RATING 200 15...


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