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ST1803DFH

ST Microelectronics
Part Number ST1803DFH
Manufacturer ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Oct 23, 2005
Detailed Description ® ST1803DFH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s s s NEW Fully Plastic TO-220 for HIGH VO...
Datasheet PDF File ST1803DFH PDF File

ST1803DFH
ST1803DFH

Overview
® ST1803DFH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s s s NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NEW SERIES, ENHANCED PERFORMANCE INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1500 V ) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS FULLY INSULATED PACKAGE (U.
L.
COMPLIANT) FOR EASY MOUNTING CREEPAGE DISTANCE PATH > 4 mm TO-220FH APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOR TVS DESCRIPTION The device is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
INTERNAL SCHEMATIC DIAGRAM RBE =20 Ω Typ.
ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot V isol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max.
Operating Junction Temperature Value 1500 600 7 10 15 4 40 2500 -65 to 150 150 Unit V V V A A A W V o o C C December 2002 1/6 ST1803DFH THERMAL DATA R thj-case Thermal Resistance Junction-case Max 3.
125 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Test Conditions V CE = 1500 V V CE = 1500 V V EB = 4 V I E = 700 mA Tj = 125 o C 130 7 Min.
Typ.
Max.
1 2 400 Unit mA mA mA V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ IC = 4 A IC = 4 A IC = 4 A IC = 1 A I C = 4.
5 A I C = 4.
5 A IF = 5 A IC = 4 A LB = 5 µH f = 16 KHz I B = 0.
8 A I B = 1.
2 A I B = 0.
8 A V CE = 5 V V CE = 1 V V CE = 5 V I Bon(END) = 0.
8 A V BB = -2.
5 V (see figure 1) 10 5 3 5 1.
5 1.
2 V V V 15 ...


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