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KMM5364005BSW

Part Number	KMM5364005BSW
Manufacturer	Samsung Semiconductor
Description	4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
Published	Oct 26, 2005
Detailed Description	DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, ...
Datasheet	KMM5364005BSW PDF File

Overview

DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module.
The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.
A 0.
1 or 0.
22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.
The KMM5364005B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
FEATURES • Part Identification - KMM5364005BSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5364005BSWG(4K cycles/64ms Ref, TSOP, Gold) • Extended Data Out Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible inputs and outputs • Single +5V±10% power supply • JEDEC standard PDpin & pinout • PCB : Height(1000mil), single sided component PERFORMAN...

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KMM5364005BSW 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4 - Samsung Semiconductor

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