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KMM5368003BSW

Part Number	KMM5368003BSW
Manufacturer	Samsung Semiconductor
Description	8MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4Mb X 4
Published	Oct 26, 2005
Detailed Description	DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Ref...
Datasheet	KMM5368003BSW PDF File

Overview

DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module.
The Samsung KMM5368003B consists of four CMOS 4Mx16bits and two CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.
A 0.
1 or 0.
22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.
The KMM5368003B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
FEATURES • Part Identification - KMM5368003BSW(4K cycles/64ms Ref, TSOP, Solder) - KMM536...

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KMM5368003BSW 8MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4Mb X 4 - Samsung Semiconductor

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