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IRFM110A

Fairchild Semiconductor
Part Number IRFM110A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Oct 27, 2005
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRFM110A PDF File

IRFM110A
IRFM110A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 100V Lower RDS(ON) : 0.
289 Ω (Typ.
) IRFM110A BVDSS = 100 V RDS(on) = 0.
4 Ω ID = 1.
5 A SOT-223 2 1 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C ) Continuous Drain Current (TA=70 C ) Ο Ο Value 100 1.
5 1.
19 1 O Units V A A V mJ A mJ V/ns W W/ C Ο Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive ...


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