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CEF04N6

Chino-Excel Technology
Part Number CEF04N6
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Nov 2, 2005
Detailed Description CEF04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 600V , 2.5A , RDS(ON)=2.5 Ω...
Datasheet PDF File CEF04N6 PDF File

CEF04N6
CEF04N6

Overview
CEF04N6 Feb.
2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 600V , 2.
5A , RDS(ON)=2.
5 Ω @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole D G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A W W/ C C Ć30 2.
5 10 2.
5 35 0.
28 -55 to 150 THERMAL CHARACTERISTICS Thermal Re...


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