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CEF09N6

Chino-Excel Technology
Part Number CEF09N6
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Nov 2, 2005
Detailed Description CEF09N6 Jul. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 6A ,RDS(ON)= 1.2 Ω @VG...
Datasheet PDF File CEF09N6 PDF File

CEF09N6
CEF09N6

Overview
CEF09N6 Jul.
2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 6A ,RDS(ON)= 1.
2 Ω @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220F full-pak for through hole.
D 6 G G D S TO-220F S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A W W/ C C Ć30 5 15 5 50 0.
38 -55 to 150 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 6-127 2.
6 65 C/W C/W CEF09N6 ELECTRICAL CHARACTERISTICS (TCȝ 25 C unless otherwise noted) Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Symbol a Condition VDD =50V, L=23.
4mH R...


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