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SPP20N60C2

Infineon Technologies
Part Number SPP20N60C2
Manufacturer Infineon Technologies
Description Cool MOS Power Transistor
Published Nov 8, 2005
Detailed Description Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage techn...
Datasheet PDF File SPP20N60C2 PDF File

SPP20N60C2
SPP20N60C2

Overview
Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances 1 P-TO220-3-31 2 3 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO220-3-31 P-TO263-3-2 V Ω A 0.
19 20 P-TO220-3-1 Type SPP20N60C2 SPB20N60C2 SPA20N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4320 Q67040-S4322 Marking 20N60C2 20N60C2 20N60C2 P-TO220-3-31 Q67040-S4333 Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 20 13 201) 131) 40 690 1 20 6 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =10A, VDD =50V ID puls EAS EAR IAR 40 690 1 20 6 ±20 ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax 2) ID =20A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS = 20 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 208 34.
5 Operating and storage temperature Page 1 Tj , Tstg -55.
.
.
+150 °C 2002-08-12 Final data Thermal Characteristics Parameter Characteristics SPP20N60C2, SPB20N60C2 SPA20N60C2 Symbol min.
Values typ.
max.
Unit Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.
6 mm (0.
063 in.
) from case for 10s RthJC RthJC_FP RthJA RthJA_FP RthJA - 35 - 0.
6 3.
6 62 80 62 1.
67 0.
28 260 K/W W/K °C Tsold - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.
25mA V(BR)...


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