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SSR1N50B

Fairchild Semiconductor
Part Number SSR1N50B
Manufacturer Fairchild Semiconductor
Description 520V N-Channel MOSFET
Published Nov 11, 2005
Detailed Description SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General Description These N-Channel enhancement mode powe...
Datasheet PDF File SSR1N50B PDF File

SSR1N50B
SSR1N50B

Overview
SSR1N50B / SSU1N50B SSR1N50B / SSU1N50B 520V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features • • • • • • 1.
3A, 520V, RDS(on) = 5.
3Ω @VGS = 10 V Low gate charge ( typical 8.
3 nC) Low Crss ( typical 5.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Cu...


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