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STB13NK60Z

ST Microelectronics
Part Number STB13NK60Z
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Nov 11, 2005
Detailed Description STB13NK60Z - STB13NK60Z-1 STP13NK60Z/FP - STW13NK60Z N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-...
Datasheet PDF File STB13NK60Z PDF File

STB13NK60Z
STB13NK60Z

Overview
STB13NK60Z - STB13NK60Z-1 STP13NK60Z/FP - STW13NK60Z N-CHANNEL 600V - 0.
48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET General features Type VDSS RDS(on) STB13NK60Z-1 STB13NK60Z STP13NK60ZFP STP13NK60Z STW13NK60Z 600 V 600 V 600 V 600 V 600 V <0.
55 Ω <0.
55 Ω <0.
55 Ω <0.
55 Ω <0.
55 Ω ID 13 A 13 A 13 A 13 A 13 A Pw 150 W 150 W 35 W 150 W 150 W ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEABILITY Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Applications ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES ■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE Order codes Package 3 2 1 TO-220 3 2 1 TO-220FP 123 I²PAK 3 2 1 TO-247 3 1 D²PAK Internal schematic diagram Sales Type STB13NK60Z-1 STB13NK60ZT4 STP13NK60ZFP STP13NK60Z STW13NK60Z September 2005 Marking B13NK60Z-1 B13NK60Z P13NK60ZFP P13NK60Z W13NK60Z Package I²PAK D²PAK TO-220FP TO-220 TO-247 Packaging TUBE TAPE & REEL TUBE TUBE TUBE Rev 2 1/17 www.
st.
com 17 1 Electrical ratings STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-Source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20kΩ) VGS Gate-Source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM Note 2 Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor Vesd(G-S) G-S ESD (HBM C=100pF, R=1.
5kΩ) dv/dt Note 3 Peak Diode Recovery voltage slope VISO Insulation Withstand Volatge (DC) Tj Operating Junction Temperature Tstg Storage Temperature Value TO-220 / TO-247 I²PAK / D²PAK TO-220FP 13 8.
2 52 150 1.
20 -- 600 600 ± 30 4000 4.
5 1...


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