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IXTQ36N50P

IXYS
Part Number IXTQ36N50P
Manufacturer IXYS
Description Power MOSFET
Published Nov 12, 2005
Detailed Description PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV ...
Datasheet PDF File IXTQ36N50P PDF File

IXTQ36N50P
IXTQ36N50P

Overview
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS VDSS = ID25 = ≤ RDS(on) 500 36 170 V A mΩ TO-3P (IXTQ) Symbol V DSS VDGR VGS VGSM I D25 IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions T J = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient T C = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 3 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque(TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 TO-3P Maximum Ratings 500 V 500 V G DS ±30 V ±40 V TO-247 (IXTH) 36 A 108 A 36 A 50 mJ 1.
5 J 10 V/ns TO-268 (IXTT) (TAB) (TAB) 540 W -55 .
.
.
+150 °C 150 °C -55 .
.
.
+150 °C G S 300 °C PLUS220 (IXTV) 260 °C 1.
13/10 Nm/lb.
in.
20.
.
120/4.
5.
.
15 6 5 2 5.
5 N/lb G g DS g g PLUS220 SMD(IXTV.
.
S...


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