DatasheetsPDF.com

MSA-1105

Hewlett-Packard
Part Number MSA-1105
Manufacturer Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Published Nov 16, 2005
Detailed Description Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1105 Features • High Dynamic Range Cascadable 50 Ω or 75 Ω...
Datasheet PDF File MSA-1105 PDF File

MSA-1105
MSA-1105

Overview
Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1105 Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth: 50 MHz to 1.
3 GHz • 17.
5 dBm Typical P1 dB at 0.
5 GHz • 3.
6 dB Typical Noise Figure at 0.
5 GHz • Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1.
Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.
” Description The MSA-1105 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package.
This MMIC is designed for high dynamic range in either 50 or 75 Ω systems by combining low noise figure with high IP3.
Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems.
05 Plastic Package The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Typical Biasing Configuration R bias VCC > 8 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.
5 V 2 2 MSA-1105 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 550 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 125°C/W Notes: 1.
Permanent damage may occur if any of these limits are exceeded.
2.
TCASE = 25°C.
3.
Derate at 8 mW/°C for TC > 124°C.
4.
See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C Symbol GP Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω Power Gain (|S21 | 2) f = 0.
05 GHz f = 0.
5 GHz f = 1.
0 GHz f = 0.
1 to 1.
0 GHz f = 0.
1 to 1.
0 GHz f = 0.
1 to 1.
0 GHz f = 0.
5 GHz f = 0.
5 GHz f = 0.
5 GHz f = 0.
5 GHz Units dB dB dB ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)