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STP55NF06LFP

ST Microelectronics
Part Number STP55NF06LFP
Manufacturer ST Microelectronics
Description N-Channel Power MOSFET
Published Nov 17, 2005
Detailed Description N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET™II POWER MOSFET TYPE STP55NF06L STP55NF06LFP STB55NF06L STB5...
Datasheet PDF File STP55NF06LFP PDF File

STP55NF06LFP
STP55NF06LFP

Overview
N-CHANNEL 60V - 0.
014Ω - 55A TO-220/FP/D2PAK/I2PAK STripFET™II POWER MOSFET TYPE STP55NF06L STP55NF06LFP STB55NF06L STB55NF06L-1 s s s STP55NF06L - STP55NF06LFP STB55NF06L - STB55NF06L-1 VDSS 60 V 60 V 60 V 60 V RDS(on) <0.
018 Ω <0.
018 Ω <0.
018 Ω <0.
018 Ω ID 55 55 55 55 A A A A 3 1 2 1 3 2 TYPICAL RDS(on) = 0.
014Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 TO-220FP 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) ABSOLUTE MAXIMUM RATINGS Symbol Parameter 1 D2PAK 3 12 I2PAK INTERNAL SCHEMATIC DIAGRAM Value STP55NF06L STB55NF06L/-1 STP55NF06LFP 60 60 ± 16 55 39 220 95 0.
63 20 300 – 55 to 175 2500 30 21 120 30 0.
2 Unit VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (2) EAS (1) VISO Tstg Tj August 2002 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature V V V A A A W W/°C V/ns mJ V °C (q) Pulse width limited by safe operating area (1) Starting T j=25°C, ID=27.
5A, VDD=30V (2) I SD ≤ 55 A, di/dt ≤ 200A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/12 STP55NF06L - STP55NF06LFP - STB55NF06L - STB55NF06L-1 THERMAL DATA TO-220 D2PAK I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Te...


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